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BUT70
HIGH POWER NPN SILICON TRANSISTOR
s s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN
3 2 1
APPLICATION SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS
s
TO-218
DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 200 125 7 40 120 8 24 200 -65 to 150 150 Unit V V V A A A A W
o o
C C
July 1997
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BUT70
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = - 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 70 70 35 35 70 70 35 35 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 7A 7A 1.75 A 1.75 A 7A 7A 1.75 A 1.75 A 125 7 0.9 1.5 0.9 1.2 1.8 1.9 1.4 1.4 140 T c = 100 C V BE = -1.5V o V BE = - 1.5V T C =100 C
o
Min.
Typ.
Max. 1 5 1 4 1
Unit mA mA mA mA mA V V V V V V V V V V A/s
V CEO(sus) Collector-Emitter Sustaining Voltage V EBO V CE(sat) Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage
T j = 100 o C T j = 100 o C T j = 100 o C Tj = 100 C I B1 = 3.5 A T j = 100 o C
o
V BE(sat)
Base-Emitter Saturation Voltage
dic /dt
Rated of Rise of on-state Collector Current
V CC = 100 V t p =3 S
RC = 0
Pulsed: Pulse duration = 300 s, duty cycle < 2 %
INDUCTIVE LOAD
Symbol tr ts tf Parameter Rise Time Storage Time Fall Time Test Conditions V CC = 90 V V BB = -5 V R B2 = 1.4 L C =0.13 mH V CLAMP =125V I C = 35 A I B1 = 1.75 A T J =100o C Min. Typ. Max. 1.8 0.2 0.35 Unit s s s
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BUT70
TO-218 (SOT-93) MECHANICAL DATA
mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054
DIM.
A
C
L5 L3 L2
L6
D
E H
F
R
123
P025A
G
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BUT70
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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